Memory Devices Comprising Magnetic Tracks Individually Comprising A Plurality Of Magnetic Domains Having Domain Walls And Methods Of Forming A Memory Device Comprising Magnetic Tracks Individually Comprising A Plurality Of Magnetic Domains Having Domain Walls

ABSTRACT

A method of forming a memory device having magnetic tracks individually comprising a plurality of magnetic domains having domain walls, includes forming an elevationally outer substrate material of uniform chemical composition. The uniform composition material is partially etched into to form alternating regions of elevational depressions and elevational protrusions in the uniform composition material. A plurality of magnetic tracks is formed over and which angle relative to the alternating regions. Interfaces of immediately adjacent of the regions individually form a domain wall pinning site in individual of the magnetic tracks. Other methods, including memory devices independent of method, are disclosed.

RELATED PATENT DATA

This patent resulted from a continuation of U.S. patent application Ser.No. 14/701,870, filed May 1, 2015, entitled “Memory Devices ComprisingMagnetic Tracks Individually Comprising A Plurality Of Magnetic DomainsHaving Domain Walls And Methods Of Forming A Memory Device ComprisingMagnetic Tracks Individually Comprising A Plurality Of Magnetic DomainsHaving Domain Walls”, naming Livio Baldi and Marcello Mariani asinventors, and which was a divisional application of U.S. patentapplication Ser. No. 13/906,857, filed May 31, 2013, entitled “MemoryDevices Comprising Magnetic Tracks Individually Comprising A PluralityOf Magnetic Domains Having Domain Walls And Methods Of Forming A MemoryDevice Comprising Magnetic Tracks Individually Comprising A Plurality OfMagnetic Domains Having Domain Walls”, naming Livio Baldi and MarcelloMariani as inventors, now U.S. Pat. No. 9,048,410, the disclosures ofwhich are incorporated by reference.

STATEMENT

Research leading to this disclosure included funding from the EuropeanUnion's Framework Programme (FP/2007-2013) under grant agreement 257707.

TECHNICAL FIELD

Embodiments disclosed herein pertain to memory devices comprisingmagnetic tracks individually comprising a plurality of magnetic domainshaving domain walls, and to methods of forming a memory devicecomprising magnetic tracks individually comprising a plurality ofmagnetic domains having domain walls.

BACKGROUND

Data storage devices are divided, for the most part, into volatile datastoring devices that lose all recorded data when power is turned off andnon-volatile data storing devices that keep data even when the power isturned off. Non-volatile data storing devices include hard disk drives(HDDs) and non-volatile random access memory (RAM). The HDDs include aread and write head and a rotating data recording medium and can storedata of 100 Gb or more. However, a device that has rotating parts likethe HDD wears over time and, thus, there is a high possibility ofoperational failure, thereby reducing reliability and life.

Research and development continues with respect to non-volatile datastorage devices which do not have physically moving parts and can befabricated of high density. One such device employs movement of amagnetic domain and magnetic domain walls within a magnetic substance,and is presently commonly referred to as “racetrack magnetic memory”.Regardless, a magnetic domain in such devices constitutes a minutemagnetic region of ferromagnetic material, and has a common magneticmoment throughout the domain. The size and magnetization direction of amagnetic domain can be appropriately controlled by the shape, size, andproperties of a magnetic substance and external energy. A magneticdomain wall is a boundary portion between immediately adjacent magneticdomains. Magnetic domains and their associated walls can be moved by anexternal magnetic field or by a current applied to a magnetic substance.Conceptually, a sequence of magnetic domains can be stored along a thin,narrow strip, and can be collectively moved along the strip. Themagnetic domains and walls in the individual strips are caused to bemoved past read and/or write heads to read the present state of themagnetization direction of the domains, and/or to change such with thewrite head.

Ideally, to have a predictable reading and writing of the respectivedomains, the domains should be placed at regular intervals along thestrip and move in a discrete regular manner. Accordingly, a criticalissue is to control the position of the magnetic domains and to movethem in a controlled way. Further, the magnetic domains should not moveor wander between read and write operations, for example due to thermaleffects. Accordingly, pinning mechanisms have been developed to pin thedomain walls from moving unless so-directed. Example manners of formingdomain wall pinning sites includes provision of notches along the stripthat comprises the magnetic material and/or implanting a species inlocalized spots within the magnetic material of individual strips.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagrammatic sectional view of a substrate fragment inprocess in accordance with an embodiment of the invention.

FIG. 2 is a diagrammatic top-plan view of the FIG. 1 substrate at aprocessing step subsequent to that shown by FIG. 1.

FIG. 3 is view of the FIG. 2 substrate taken through line 3-3 in FIG. 2.

FIG. 4 is a view of the FIG. 2 substrate at a processing step subsequentto that shown by FIG. 2.

FIG. 5 is view of the FIG. 4 substrate taken through line 5-5 in FIG. 4.

FIG. 5A is an enlarged view of the 5A-circled portion in FIG. 5.

FIG. 6 is a diagrammatic top-plan view of an alternate substratefragment in process in accordance with an embodiment of the invention.

FIG. 7 is view of the FIG. 6 substrate taken through line 7-7 in FIG. 6.

FIG. 8 is a view of the FIG. 7 substrate at a processing step subsequentto that shown by FIG. 7.

FIG. 9 is a view of a predecessor substrate to that of FIG. 7.

FIG. 10 is a view of an alternate predecessor substrate to the FIG. 9.

FIG. 11 is a view of the FIG. 10 substrate at a processing stepsubsequent to that shown by FIG. 10.

FIG. 12 is a view of the FIG. 11 substrate at a processing stepsubsequent to that shown by FIG. 11.

FIG. 13 is a view of an alternate substrate at an alternate processingstep subsequent to that shown by FIG. 11.

FIG. 14 is a view of the FIG. 8 substrate at a processing stepsubsequent to that shown by FIG. 8.

FIG. 15 is view of the FIG. 14 substrate taken through line 15-15 inFIG. 14.

FIG. 15A is an enlarged view of the 15A-circled portion in FIG. 15.

FIG. 16 is a diagrammatic sectional view of an alternate substratefragment in process in accordance with an embodiment of the invention.

FIG. 16A is an enlarged view of the 16A-circled portion in FIG. 16.

FIG. 17 is a diagrammatic sectional view of an alternate substratefragment in accordance with an embodiment of the invention.

FIG. 18 is a diagrammatic oblique view of an alternate substratefragment in process in accordance with an embodiment of the invention.

FIG. 19 is a view of the FIG. 18 substrate at a processing stepsubsequent to that shown by FIG. 18.

FIG. 20 is a view of the FIG. 19 substrate at a processing stepsubsequent to that shown by FIG. 19.

FIG. 21 is a view of the FIG. 20 substrate at a processing stepsubsequent to that shown by FIG. 20.

FIG. 22 is a view of the FIG. 21 substrate at a processing stepsubsequent to that shown by FIG. 21.

FIG. 23 is an enlarged side-elevational view of a portion of the FIG. 22substrate.

FIG. 24 is a view of an alternate embodiment substrate to that shown byFIG. 23.

DETAILED DESCRIPTION OF EXAMPLE EMBODIMENTS

Methods of forming a memory cell in accordance with some embodiments ofthe invention are initially described with reference to FIGS. 1-4. Thememory device will comprise magnetic tracks that individually comprise aplurality of magnetic domains having domain walls. Referring to FIG. 1,an example substrate fragment 10 is shown. Substrate 10 may comprise asemiconductor substrate. In the context of this document, the term“semiconductor substrate” or “semiconductive substrate” is defined tomean any construction comprising semiconductive material, including, butnot limited to, bulk semiconductive material such as a semiconductivewafer (either alone or in assemblies comprising other material thereon),and semiconductive material layers (either alone or in assembliescomprising other material). The term “substrate” refers to anysupporting structure, including, but not limited to, the semiconductivesubstrates described above.

Substrate 10 comprises an elevationally outer substrate material 12which is over an elevationally inner substrate material 14. An examplethickness for material 12 is from about 30 nanometers to about 1 micron.Other partially or wholly fabricated components of integrated circuitrymay be formed as a part of or be elevationally inward of material 12(e.g., CMOS devices and at least one level of interconnections), and arenot particularly germane to the inventions disclosed herein. Any of thematerials and/or structures described herein may be homogenous ornon-homogenous, and regardless may be continuous or discontinuous overany material which such overlie. Also when used herein, “differentcomposition” only requires those portions of two stated materials thatmay be directly against one another to be chemically and/or physicallydifferent, for example if such materials are not homogenous. If the twostated materials are not directly against one another, “differentcomposition” only requires that those portions of the two statedmaterials that are closest to one another be chemically and/orphysically different if such materials are not homogenous. In thisdocument, a material or structure is “directly against” another whenthere is at least some physical touching contact of the stated materialsor structures relative one another. In contrast, “over”, “on”, and“against” not preceded by “directly”, encompass “directly against” aswell as construction where intervening material(s) or structure(s)result(s) in no physical touching contact of the stated materials orstructures relative one another. Further, each material may be formedusing any suitable or yet-to-be-developed technique, with atomic layerdeposition, chemical vapor deposition, physical vapor deposition,epitaxial growth, diffusion doping, and ion implanting being examples.

In one embodiment, outer substrate material 12 is of uniformcomposition, although such may not be homogenous. For example, material12 may possess multiple physical differences. As examples, material 12may have different amorphous and crystalline regions, crystallineregions of different lattice configurations, monocrystalline regions,polycrystalline regions, etc., yet still maintain uniform chemicalcomposition throughout. Nevertheless, in one embodiment outer substratematerial 12 is homogenous. Additionally, material 12 may comprise amixture of different composition materials that provides a uniformchemical composition throughout. Regardless, in one embodiment theuniform chemical composition of substrate material 12 is dielectric,with at least one of silicon dioxide and silicon nitride being examples.

Referring to FIGS. 2 and 3, material 12 has been partially etched intoto form alternating regions 16, 18 of elevational depressions andelevational protrusions, respectively, in material 12. Such may beconducted by a timed etch which leaves some of material 12 overlyingunderlying substrate material 14. In one embodiment and as shown, thealternating regions form elongated parallel trenches and mesas.Regardless, the elevational depressions and elevational protrusions maybe formed by any suitable technique, such as lithography (e.g.,photolithography) using an etch mask. Further, if lithography is used,the lateral or transverse narrowest dimensions of the respectivedepressions and protrusions may be sub-lithographic, for examplefabricated using pitch multiplication or other technique. In thedepicted example, each depression is shown as being of constant minimumwidth and each protrusion is shown as being of constant minimum width,and those minimum widths are shown being equal relative one another.Alternate configurations could be used, for example with the depressionsand/or protrusions having at least two different widths there-along (notshown) and/or different widths relative one another (not shown).Outermost surfaces of depressions 16 and/or protrusions 18 need not beplanar. Regardless, an example depth of depression 16 relative tooutermost surfaces of protrusions 18 is about 0.5 nanometer to about0.75 nanometer. In one embodiment, the depths of depressions 16 are fromabout 25% to about 50% of elevational thickness of the magnetic materialof the magnetic tracks (not shown in FIG. 2), with an example magneticmaterial thickness as-described below being about 1.0 nanometer to about1.5 nanometers. Depth of depressions 16 need not be constant, althoughsuch may be ideal.

Sidewalls of projections 18 are shown as being vertical and orthogonalto planar horizontal outermost surfaces of material 12. In thisdocument, “horizontal” refers to a general direction along a primarysurface relative to which the substrate is processed during fabrication,and “vertical” is a direction generally orthogonal thereto. Further asused herein, “vertical” and “horizontal” are generally perpendiculardirections relative one another independent of orientation of thesubstrate in three-dimensional space. Further in this document,“elevational” and “elevationally” are generally with reference to thevertical direction. Alternate angles for the projection sidewalls may beused (e.g., from about 45° to about 135°), and outermost surfaces ofmaterial 12 may be other than planar, and if planar may not be coplanar.In the context of this document, “angle” defines some angle other thanthe straight angle.

Referring to FIGS. 4, 5, and 5A, a plurality of magnetic tracks 20 hasbeen formed over and angle relative to alternating regions 16 and 18.Orthogonal angling is shown in FIG. 4, although non-orthogonal anglingmay be used (e.g., from about 45° to some number less than 90°, or fromsome number greater than 90° to about 135°). Orthogonal or close toorthogonal is ideal. Example magnetic tracks 20 are individually shownas comprising magnetic material 22 received between outer and innermaterials 24, 26, respectively. Any alternate existing oryet-to-be-developed constructions and materials may be used. One examplemagnetic material is CoFeB. Further in one embodiment, one or both ofouter material 24 and inner material 26 is electrically conductive. Ifboth are electrically conductive, such may be of the same compositionmaterial or of different composition materials. An example thickness foreach of materials 24 and 26 is about 5 nanometers and an examplethickness for magnetic material 22 is about 1.0 nanometer to about 1.5nanometers. The thickness of inner material 26 may be adjusted or chosenin proportion to step height and thickness of material 22 to optimizepinning site effectiveness. Magnetic tracks 20 may run parallel relativeone another, for example as shown. Such tracks may be straight-linear,curvilinear, include a combination of different straight segments whichangle relative one another, and/or a combination of straight and curvedsegments. Regardless, magnetic material 22 comprises domains 75 anddomain walls 80 (FIGS. 5 and 5A).

In one embodiment, the magnetic material of the magnetic tracks is notformed directly against the elevationally outer substrate material, andin one embodiment an electrically conductive material is between theelevationally outer substrate material and the magnetic tracks. FIGS. 4,5, and 5A show such an example embodiment where magnetic material 22 oftracks 20 is not directly against elevationally outer substrate material12, with such being spaced therefrom by material 26 (which may beelectrically conductive). Regardless, in one embodiment and as shown,magnetic material 22 of the magnetic tracks 20 is not elevationallywithin depressions 16.

Interfaces of immediately adjacent of regions 16, 18 individuallycomprise a domain wall pinning site in individual magnetic tracks 20.For example, one or some combination of the outermost edge, theinnermost edge, or sidewall of a protrusion relative a depression may beconsidered as or constitute an interface 21 which functions as a domainwall pinning site 21 in individual magnetic tracks 20.

Alternate embodiment methods of forming a memory device are nextdescribed with reference to FIGS. 6-15, and 15A. Referring to FIGS. 6and 7, a substrate fragment 10 a is shown. Like numerals from theabove-described embodiment have been used where appropriate, with someconstruction differences being indicated with the suffix “a” or withdifferent numerals. Alternating elevationally outer regions 30, 32 havebeen formed of two different composition materials 34, 36. The twodifferent compositions may be commonly semiconductive, conductive, anddielectric, or combinations of these. Materials 34 and 36 may becharacterized by chemically different compositions, with silicon dioxideand silicon nitride being two examples. Alternately, immediatelyadjacent regions 30, 32 may be of the same chemical composition and ofdifferent physical compositions relative one another, for exampledifferent physical compositions as described above. Regardless, in oneembodiment, regions 30, 32 have co-planar elevationally outermostsurfaces, and regardless in one embodiment have planar elevationallyoutermost surfaces which are horizontal.

One of the two different composition materials is removed inwardly to anelevationally outermost location of the one material that is deeper thanan elevationally outermost location of the other of the two differentcomposition materials at the end of the act of removing. Thereby,alternating regions of elevational depressions and elevationalprotrusions are formed. FIG. 8 shows such an example embodiment whereinmaterial 36 has been removed inwardly to an elevationally outermostlocation 40 of material 36 that is deeper than an elevationallyoutermost location 42 of material 34. Thereby, alternating regions ofelevational depressions 16 and elevational protrusions 18 have beenformed.

The act of removing may remove some of both of the two differentcomposition materials or may remove some of only the one material, forexample material 36 as shown in FIG. 8. Regardless, in one embodiment,the removing comprises polishing, for example mechanical polishing orchemical mechanical polishing. In one embodiment, the polishing removessome of both of the two different composition materials, with the onematerial (e.g., material 36 as shown) being over-polished relative theother material (e.g., material 34). In one embodiment, the act ofremoving comprises chemical etching in the absence of any mechanicalpolishing component. Any chemical etching may etch the other of the twodifferent composition materials (e.g., material 34 as well as material36), or may not measurably etch the other of the two differentcomposition materials. Use of two different composition materials withdifferent sensitivity to chemical mechanical polishing may allow acontrolled small degree of over-polish which enables small steps to becreated where desired.

Any existing or yet-to-be-developed techniques may be used for producinga FIGS. 6 and 7-like construction. For example, material 34 may beconsidered as a first composition and material 36 as a secondcomposition. The alternating regions 30, 32 of FIGS. 6 and 7 may beformed by depositing one of the first composition or the secondcomposition over underlying substrate material (e.g., material 14).Then, etching is conducted through such one of the first or secondcompositions to the underlying substrate material. By way of example,FIG. 9 shows first composition material 34 having been deposited overunderlying substrate material 14, with material 34 having beensubsequently etched-through to underlying substrate 14 to produce thedepicted pattern. Again, lithographic or other technique could be used,including pitch multiplication techniques. Then, other material 36 couldbe formed over underlying substrate 14 and between material 34. Such mayalso be formed elevationally over material 34. Processing then may beconducted as described above to produce the construction of FIGS. 6 and7, and/or FIG. 8.

An alternate technique for forming alternating regions 30, 32 is nextdescribed with reference to FIGS. 10-12 with respect to a substratefragment 10 b. Like numerals from the above-described embodiments havebeen used where appropriate, with some construction differences beingindicated with the suffix “b” or with different numerals. FIG. 10 showsexample alternate or additional processing to that depicted by FIG. 9.Referring to FIG. 10, one of the first composition or the secondcomposition (e.g., material 34) has been deposited over underlyingsubstrate material 14. Etching has then been conducted through the oneof the first or second compositions into the underlying material to formtrenches 37 in underlying material 14 and the one of the first andsecond compositions (e.g., material 34). The trenches are thenover-filled with the other of the first and second compositions. Atleast some of the over-filled material is then removed, for example toproduce the construction of FIG. 11. The one or the other of the firstand second compositions may then be removed inwardly, for example asshown alternatively with respect to substrate fragment 10 b in FIG. 12and a substrate fragment 10 c in FIG. 13.

Referring to FIGS. 14, 15, and 15A with respect to substrate 10 a, aplurality of magnetic tracks 20 has been formed over and angle relativeto alternating regions 16, 18. Interfaces 21 (two being shown in FIG.15A) of immediately adjacent of regions 16, 18 individually comprise adomain wall pinning site 21 in individual magnetic tracks 20.

Additional example methods of forming a memory device are next describedwith reference to FIGS. 7, 11, 16, and 16A. In such embodiments, aseries of regions are formed which have coplanar outer surfaces, withimmediately adjacent of the regions being of different compositionrelative one another. For example, the embodiments of FIGS. 7 and 11 maybe considered as showing a series of regions 30, 32 having coplanarouter surfaces 43 where immediately adjacent of such regions are ofdifferent compositions 34, 36 relative one another. Any one or more ofthe attributes as described above may be used. In one embodiment, theseries of regions is characterized by alternating first and secondchemically different composition regions in the series. In oneembodiment, the series of regions is characterized by only two differentcompositions having coplanar outer surfaces 43. Regardless, in oneembodiment, the coplanar outer surfaces are formed to be horizontal, inone embodiment are formed to be horizontal or within 10° of horizontal,and in one embodiment are formed to be elevationally extending (i.e.,having some degree of elevational extent such that the coplanar surfacesare not perfectly horizontal) (not shown).

Referring to FIGS. 16 and 16A, a plurality of magnetic tracks 20 hasbeen formed over coplanar outer surfaces 43 and which angle relative todifferent composition regions 30, 32. The substrate of FIGS. 16 and 16Ais indicated with reference numeral 16 d, with like numerals from theabove-described embodiments having been used where appropriate, withsome construction differences being indicated with the suffix “d”.Interfaces 21 d of immediately adjacent regions 30, 32 individuallycomprise a domain wall pinning site 21 d in individual magnetic tracks20. Accordingly, in some embodiments, a pinning site is realized(without any elevational step between regions) by mere compositiondifferences in the two materials over which the magnetic track lies,where for example the different composition is at least one of physicalor chemical. Such may result from mechanical stress provided by the twodifferent composition materials or by other phenomena.

The above-described processing leading to FIGS. 16 and 16A is withrespect to an embodiment wherein coplanar outer surfaces 43 are shown tobe horizontal. Embodiments of the invention also contemplate methods(and structure as described below) wherein the coplanar outer surfacesare not horizontal, for example as shown with respect to a substratefragment 10 e as shown in FIG. 17. Like numerals from theabove-described embodiments have been used where appropriate, with someconstruction differences being indicated with the suffix “e”. Substrate10 e is shown with materials 34, 36 having a co-planar vertical surface43 e. An alternate co-planar surface (not shown) may be neitherhorizontal nor vertical. Regardless, any of the attributes describedabove with the stated materials and constructions may be used in theembodiment of FIG. 17.

Embodiments of the invention encompass memory devices independent ofmethod of manufacture. In one such embodiment, a memory device comprisesmagnetic tracks which individually comprise a plurality of magneticdomains having domain walls. The memory device comprises a series ofregions having coplanar outer surfaces, with immediately adjacent of theregions being of different composition relative one another. Theembodiments of FIGS. 16, 16A, and

FIG. 17 show example such embodiments with respect to series of regions30, 32 having coplanar outer surfaces 43, 43 e, respectively. (FIG. 23also shows such an embodiment, and is described in more detail below). Aplurality of magnetic tracks (e.g., tracks 20) is formed over thecoplanar outer surfaces of and which angle relative to the differentcomposition regions. Interfaces of immediately adjacent of the regions(e.g., interfaces 21 d, 21) individually comprise a domain wall pinningsite in individual of the magnetic tracks. Any of the other structuraland compositional aspects as described above in the method embodimentsmay be employed in the memory device embodiment.

Appropriate circuitry and devices (not shown) may be used to move themagnetic domains and domain walls to/past read and/or write heads (notshown), and are not germane to the inventions disclosed herein. Further,the magnetic tracks may be include segments or portions that areoriented horizontally, vertically, otherwise, and/or combinationsthereof.

Additional example methods of forming a memory device are next describedinitially with reference to FIGS. 18-22 with respect to a substratefragment 10 f. Like numerals from the above-described embodiments havebeen used where appropriate, with some construction differences beingindicated with the suffix “f” or with different numerals. Referring toFIG. 18, a series of elevationally stacked regions 34, 36 has beenformed over substrate 14. Immediately adjacent of regions 34, 36 are ofdifferent composition relative one another.

Referring to FIG. 19, longitudinally elongated first trenches 45 (onlyone being shown for brevity in the figures) have been formed through atleast some of regions 34, 36 (e.g., all of such regions as shown).Individual first trenches 45 may be oriented longitudinally parallelrelative on another. Additionally, the trenches may be longitudinallystraight linear, longitudinally curvilinear, include a combination oflongitudinally straight and curved segments, and/or include individuallongitudinal segments that angle relative one another. First trenches 45individually comprise opposing sidewalls 47 and a base 49. In oneembodiment and as shown, the forming of the first trenches forms lateralsurfaces 43 f of stacked regions 34, 36 elevationally along individualsidewalls of individual first trenches to be individually planar.

Referring to FIG. 20, magnetic track material 53 has been formed withinindividual first trenches 45 against opposing first trench sidewalls 47and first trench base 49. Magnetic track material 53 may be formeddirectly against sidewalls 47 and base 49, as shown. Magnetic trackmaterial 53 may entirely comprise magnetic material (e.g., CoFeB) orcomprise a composite of different materials some of which may not bemagnetic (e.g., a composite of materials 22, 24, 26 as described aboveand further below). Regardless, FIG. 20 shows one example embodimentwherein magnetic track material 53 is formed to line and less-than-fillindividual first trenches 45 and form a cavity 55 within individualfirst trenches 45. Further, in one such embodiment and referring to FIG.21, cavities 55 have been filled with dielectric 57 (e.g., silicondioxide and/or silicon nitride).

Referring to FIG. 22, longitudinally elongated second trenches 59 (onlyone being shown for brevity in the figures) have been formedelevationally through magnetic track material 53 and at least some ofelevationally stacked regions 34, 36 (e.g., all as shown) to formmagnetic tracks 20 f which individually comprise a plurality of magneticdomains having domain walls (e.g., magnetic domains 75 having domainwalls 80 as shown in FIGS. 23 and 24). Dielectric material 57 may not beformed prior to forming second trenches 59 (not shown). Yet if formed,second trenches 59 will be formed elevationally into dielectric material57, and in one embodiment elevationally through dielectric material 57as shown. In one embodiment and as shown, second trenches 59 are formedthrough the same regions 34, 36 into which first trenches 45 wereformed, and in one embodiment through all of regions 34, 36 as shown.Regardless, second trenches 59 longitudinally angle relative to firsttrenches 45. Orthogonal angling is shown in FIG. 22, althoughnon-orthogonal angling may be used (e.g., from about 45° to some numberless than 90°, or from some number greater than 90° to about 135°).Orthogonal or close to orthogonal is ideal. Regardless, interfaces 21 ofimmediately adjacent of regions 34, 36 along an individual sidewall 47individually comprise a domain wall pinning site 21 in magnetic track 20f along that sidewall 47. Second trenches 59 may ultimately be filledwith dielectric and/or other material (not shown).

In one embodiment where lateral surfaces 43 f of stacked regions 34, 36elevationally along individual sidewalls 47 are individually planar,such may be formed to be coplanar, for example as shown in FIG. 23. Theenlarged view of FIG. 23 is of region X in FIG. 22, and shows magnetictrack material 53 as comprising a composite of materials 22, 24, and 26.Regardless, in one embodiment and as shown, coplanar lateral surfaces 43f are formed to be vertical. Alternately, the lateral surfaces may beformed to be non-vertical (not shown), for example within 10 degrees ofvertical or within 45 degrees of vertical.

As an alternate example, the first trenches may be formed such thatstacked regions 34, 36 elevationally along individual sidewalls ofindividual first trenches comprise elevationally alternating regions oflateral sidewall depressions and lateral sidewall protrusions. FIG. 24shows such an example alternate embodiment substrate 10 g having lateralsidewall depressions 16 g and lateral sidewall protrusions 18 g. Likenumerals from the above-described embodiments have been used whereappropriate, with some construction differences being indicated with thesuffix “g”. FIG. 24, like FIG. 23, is an enlarged view of a region X inFIG. 22. Example attributes and depths of depressions 16 g relative tooutermost surfaces of protrusions 18 g may be as described above withrespect to depressions 16 and protrusions 18. Further, in one embodimentand as shown, magnetic material 22 of magnetic tracks 20 g may not belaterally within lateral sidewall depressions 16 g. Trenches 45 and 59may be formed by any existing or yet-to-be-developed manner(s), forexample using photolithographic patterning and etch. Further, an etchingchemistry or chemistries used to etch first trenches 45 may etch one ofmaterials 34, 36 (e.g., material 36 as shown in FIG. 24) at a greaterrate than any etch of the other to produce the depicted depressions 16 gand protrusions 18 g.

As with the above-described embodiments, appropriate circuitry anddevices (not shown) may be used to move the magnetic domains and thedomain walls to/past read and/or write heads (not shown) and are notgermane to the inventions disclosed herein. By ways of example only,read and/or write elements could be placed one or both of below and/oras a part of trench base 49, and/or atop magnetic tracks 20 f, 20 gelevationally over regions 34, 36.

FIGS. 22 and 23, and FIG. 24, show two example additional embodiments ofthe invention to that of FIG. 17 which may encompass a memory deviceindependent of manufacture. For example, embodiments of the inventionencompass a memory device (e.g., FIG. 17; FIGS. 22, 23; and FIG. 24)wherein a series of elevationally stacked regions (e.g., 34, 36) haveopenings (e.g., openings 45) extending elevationally through at leastsome of the stacked regions. Immediately adjacent of those regions areof different composition relative one another. The openings individuallycomprise opposing sidewalls (e.g., sidewalls 47) and a base (e.g., base49). A magnetic track (e.g., track 20, 20 f, 20 g) is within individualof the openings against the opposing opening sidewalls and the openingbase. Interfaces of immediately adjacent of the regions (e.g.,interfaces 21) along an individual sidewall individually comprise adomain wall pinning site (e.g., pinning sites 21) in the magnetic trackalong that sidewall.

In some embodiments, lateral surfaces of the stacked regionselevationally along individual sidewalls of individual openings areindividually planar (e.g., lateral surfaces 43 e, 43 f, and 43 g). Inone such embodiment, the lateral surfaces may be coplanar and in oneembodiment may be vertical or within 10° of vertical (e.g., FIGS. 17 and23). In one embodiment, the stacked regions elevationally alongindividual sidewalls of individual openings form elevationallyalternating regions of lateral sidewall depressions and lateral sidewallprotrusions (e.g., FIG. 24).

In some embodiments, the magnetic track within individual openings linesand less-than-fills the individual openings and forms a cavity withinthe individual openings (e.g., cavity 55). In one embodiment, soliddielectric material fills the cavity (e.g., material 57).

Any other attribute as described above with respect to method associatedwith FIGS. 18-24 may be used in the device embodiments as shown in FIGS.22-24. Further, any of the attributes described above in connection withthe embodiments of FIGS. 1-17 may be used in the method and/or deviceembodiments of FIGS. 18-24.

Conclusion

In some embodiments, a method of forming a memory device comprisingmagnetic tracks individually comprising a plurality of magnetic domainshaving domain walls comprises forming an elevationally outer substratematerial of uniform chemical composition. The uniform compositionmaterial is partially etched into to form alternating regions ofelevational depressions and elevational protrusions in the uniformcomposition material. A plurality of magnetic tracks is formed over andwhich angle relative to the alternating regions. Interfaces ofimmediately adjacent of the regions individually comprise a domain wallpinning site in individual of the magnetic tracks.

In some embodiments, a method of forming a memory device comprisingmagnetic tracks individually comprising a plurality of magnetic domainshaving domain walls comprises forming alternating elevationally outerregions of two different composition materials. One of the two differentcomposition materials is removed inwardly to an elevationally outermostlocation of the one material that is deeper than an elevationallyoutermost location of the other of the two different compositionmaterials at the end of said removing to form alternating regions ofelevational depressions and elevational protrusions. A plurality ofmagnetic tracks is formed over and which angle relative to thealternating regions. Interfaces of immediately adjacent of the regionsindividually comprise a domain wall pinning site in individual of themagnetic tracks.

In some embodiments, a method of forming a memory device comprisingmagnetic tracks individually comprising a plurality of magnetic domainshaving domain walls comprises forming a series of regions havingcoplanar outer surfaces. Immediately adjacent of the regions are ofdifferent composition relative one another. A plurality of magnetictracks is over the coplanar outer surfaces of and which angle relativeto the different composition regions. Interfaces of immediately adjacentof the regions individually comprise a domain wall pinning site inindividual of the magnetic tracks.

In some embodiments, a memory device comprising magnetic tracksindividually comprising a plurality of magnetic domains having domainwalls, comprises a series of regions having coplanar outer surfaces.Immediately adjacent of the regions are of different compositionrelative one another. A plurality of magnetic tracks is over thecoplanar outer surfaces of and which angle relative to the differentcomposition regions. Interfaces of immediately adjacent of the regionsindividually comprise a domain wall pinning site in individual of themagnetic tracks.

In some embodiments, a method of forming a memory device comprisingmagnetic tracks individually comprising a plurality of magnetic domainshaving domain walls comprises forming an elevationally outer substratematerial elevationally over underlying material. The elevationally outersubstrate material is etched through, with the etching continuing intothe underlying material to form trenches in the underlying material andthe outer substrate material. The trenches are over-filled with materialof different composition from that of the outer substrate material. Thematerial of different composition is removed to expose the outersubstrate material. One of the material of different composition or theouter substrate material is removed inwardly to form alternating regionsof elevational depressions and elevational protrusions. A plurality ofmagnetic tracks is formed over and which angle relative to thealternating regions. Interfaces of immediately adjacent of the regionsindividually comprising a domain wall pinning site in individual of themagnetic tracks.

In some embodiments, a method of forming a memory device comprisingmagnetic tracks individually comprising a plurality of magnetic domainshaving domain walls comprises forming a series of elevationally stackedregions. Immediately adjacent of the regions are of differentcomposition relative one another. Longitudinally elongated firsttrenches are formed elevationally through at least some of the regions.The first trenches individually comprise opposing sidewalls and a base.Magnetic track material is formed within individual of the firsttrenches against the opposing first trench sidewalls and the firsttrench base. Longitudinally elongated second trenches are formedelevationally through the magnetic track material and at least some ofthe regions to form magnetic tracks which individually comprise aplurality of magnetic domains having domain walls. The second trencheslongitudinally angle relative to the first trenches. Interfaces ofimmediately adjacent of the regions along an individual sidewallindividually comprise a domain wall pinning site in the magnetic trackalong that sidewall.

In some embodiments, a memory device comprising magnetic tracksindividually comprising a plurality of magnetic domains having domainwalls comprises a series of elevationally stacked regions havingopenings extending elevationally through at least some of the regions.Immediately adjacent of the regions are of different compositionrelative one another. The openings individually comprise opposingsidewalls and a base. A magnetic track is within individual of theopenings against the opposing opening sidewalls and the opening base.Interfaces of immediately adjacent of the regions along an individualsidewall individually comprise a domain wall pinning site in themagnetic track along that sidewall.

In compliance with the statute, the subject matter disclosed herein hasbeen described in language more or less specific as to structural andmethodical features. It is to be understood, however, that the claimsare not limited to the specific features shown and described, since themeans herein disclosed comprise example embodiments. The claims are thusto be afforded full scope as literally worded, and to be appropriatelyinterpreted in accordance with the doctrine of equivalents.

1. A method of forming a memory device comprising magnetic tracksindividually comprising a plurality of magnetic domains having domainwalls, comprising: forming an elevationally outermost substrate materialof uniform chemical composition that is chemically homogenous, thechemically-homogenous material of uniform composition having multiplephysical differences therein, the multiple physical differences beingcharacterized by one of (a), (b), and (c), where, (a): amorphous vs.crystalline; (b): crystalline but of different lattice configurations;(c): monocrystalline and polycrystalline; etching only partiallyelevationally into the chemically-homogenous material of uniformchemical composition having multiple physical differences therein toform the chemically-homogenous material of uniform chemical compositionhaving multiple physical differences therein to have alternating regionsof elevational depressions and elevational protrusions in a finishedconstruction of the memory device; and forming a plurality of magnetictracks over and which angle relative to the alternating regions,interfaces of immediately adjacent of the alternating regionsindividually comprising a domain wall pinning site in individual of themagnetic tracks.
 2. The method of claim 1 wherein the alternatingregions have outer surfaces which are horizontal or within 10° ofhorizontal.
 3. The method of claim 1 wherein the composition isdielectric.
 4. The method of claim 3 wherein the composition comprisesat least one of silicon dioxide and silicon nitride.
 5. The method ofclaim 1 wherein magnetic material of the magnetic tracks is not formeddirectly against the elevationally outermost substrate material.
 6. Themethod of claim 5 comprising an electrically conductive material betweenthe elevationally outermost substrate material and the magnetic tracks.7. The method of claim 1 wherein magnetic material of the magnetictracks is not elevationally within the depressions.
 8. The method ofclaim 1 wherein the alternating regions form elongated parallel trenchesand mesas. 9-24. (canceled)
 25. A method of forming a memory devicecomprising magnetic tracks individually comprising a plurality ofmagnetic domains having domain walls, comprising: forming a series ofregions having coplanar outer surfaces, immediately adjacent of theregions being of different composition relative one another; and forminga plurality of magnetic tracks over the coplanar outer surfaces of andwhich angle relative to the different composition regions, interfaces ofimmediately adjacent of the regions individually comprising a domainwall pinning site in individual of the magnetic tracks.
 26. The methodof claim 25 wherein immediately adjacent of the regions are of differentchemical compositions relative one another.
 27. The method of claim 25wherein immediately adjacent of the regions are of the same chemicalcomposition and of different physical compositions relative one another.28. The method of claim 25 wherein the series of regions may becharacterized by only two different compositions having the coplanarouter surfaces.
 29. The method of claim 25 wherein the series may becharacterized by alternating first and second chemically differentcomposition regions in the series.
 30. The method of claim 25 comprisingforming the coplanar outer surfaces to be horizontal.
 31. The method ofclaim 25 comprising forming the coplanar outer surfaces to be horizontalor within 10° of horizontal.
 32. The method of claim 25 comprisingforming the coplanar outer surfaces to be elevationally extending. 33.The method of claim 32 comprising forming the coplanar outer surfaces tobe vertical.
 34. The method of claim 32 comprising forming the coplanarouter surfaces to be neither horizontal nor vertical.
 35. A memorydevice comprising magnetic tracks individually comprising a plurality ofmagnetic domains having domain walls, comprising: a series of regionshaving coplanar outer surfaces, immediately adjacent of the regionsbeing of different composition relative one another; and a plurality ofmagnetic tracks over the coplanar outer surfaces of and which anglerelative to the different composition regions, interfaces of immediatelyadjacent of the regions individually comprising a domain wall pinningsite in individual of the magnetic tracks. 36-37. (canceled)
 38. Amethod of forming a memory device comprising magnetic tracksindividually comprising a plurality of magnetic domains having domainwalls, comprising: forming a series of elevationally stacked regions,immediately adjacent of the regions being of different compositionrelative one another; forming longitudinally elongated first trencheselevationally through at least some of the regions, the first trenchesindividually comprising opposing sidewalls and a base; forming magnetictrack material within individual of the first trenches against theopposing first trench sidewalls and the first trench base, and forminglongitudinally elongated second trenches elevationally through themagnetic track material and at least some of the regions to formmagnetic tracks which individually comprise a plurality of magneticdomains having domain walls, the second trenches longitudinally anglingrelative to the first trenches, interfaces of immediately adjacent ofthe regions along an individual sidewall individually comprising adomain wall pinning site in the magnetic track along that sidewall.39-47. (canceled)
 48. A memory device comprising magnetic tracksindividually comprising a plurality of magnetic domains having domainwalls, comprising: a series of elevationally stacked regions havingopenings extending elevationally through at least some of the regions,immediately adjacent of the regions being of different compositionrelative one another, the openings individually comprising opposingsidewalls and a base; and a magnetic track within individual of theopenings against the opposing opening sidewalls and the opening base,interfaces of immediately adjacent of the regions along an individualsidewall individually comprising a domain wall pinning site in themagnetic track along that sidewall. 49-60. (canceled)
 61. The method ofclaim 1 comprising (a): amorphous vs. crystalline.
 62. The method ofclaim 1 comprising (b): crystalline but of different latticeconfigurations.
 63. The method of claim 1 comprising (c):monocrystalline and polycrystalline.
 64. The method of claim 1 whereinthe elevationally outermost substrate material has a thickness of fromabout 30 nanometers to about 1 micron.